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EMH2408
10
1m μ s
4.5
4.0
3.5
VDS=10V
ID=4A
VGS -- Qg
3
2
10
7
5
IDP=16A
ID=4A
ASO
PW≤10μs
0
s
era
10
s
0m
n(
=2
C)
3.0
2.5
2.0
1.5
3
2
1.0
7
5
3
2
DC
op
tio
Operation in this
area is limited by RDS(on).
10
Ta
s
m
5 °
0.1
1.0
7
5
0.5
0
3
2
0.01
Ta=25 ° C
Single pulse
When mounted on ceramic substrate (900mm 2 ? 0.8mm) 1unit
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2
3
1.4
Total Gate Charge, Qg -- nC IT13507
PD -- Ta
When mounted on ceramic substrate
(900mm 2 ? 0.8mm)
Drain-to-Source Voltage, VDS -- V
IT13508
1.2
1.0
To
al
n t i
0.8
0.6
1u
t
di
ss
ip
ati
on
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- ° C
IT13509
No. A1170-4/7
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